Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces

T. S. Lay*, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

82 引文 斯高帕斯(Scopus)

摘要

The valence-band offset (ΔEv ) has been determined to be ∼2.6 eV at the Ga2O3(Gd2O3)-GaAs interface, and ∼1.1 eV at the Ga2O3(Gd2O3)-GaN interface by high-resolution X-ray photoelectron spectroscopy with synchrotron radiation beam. ThePt-Ga2O3(Gd2O3)-GaAs MOS diode exhibits a current-voltage characteristics dominated by Fowler-Nordheim tunneling. From the current-voltage data at forward and reverse biases, we have extracted a conduction-band offset (ΔEC) of ∼1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass m* ∼ 0.29me of the Ga2O3(Gd2O3) layer. Consequently, the energy-band gap of Ga2O3(Gd2O3) is ∼5.4 eV, while ΔEc for the Ga2O3(Gd2O3)-GaN interface is ∼0.9 eV.

原文英語
頁(從 - 到)1679-1682
頁數4
期刊Solid-State Electronics
45
發行號9
DOIs
出版狀態已發佈 - 2001 九月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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