TY - JOUR
T1 - Energy band offsets at a ga2o3(gd2o3)-gaas interface
AU - Lay, T. S.
AU - Hong, M.
AU - Kwo, J.
AU - Mannaerts, J. P.
AU - Hung, W. H.
AU - Huang, D. J.
PY - 1999
Y1 - 1999
N2 - We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.
AB - We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.
UR - http://www.scopus.com/inward/record.url?scp=0032638466&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032638466&partnerID=8YFLogxK
U2 - 10.1557/proc-573-131
DO - 10.1557/proc-573-131
M3 - Conference article
AN - SCOPUS:0032638466
SN - 0272-9172
VL - 573
SP - 131
EP - 135
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing'
Y2 - 5 April 1999 through 7 April 1999
ER -