Energy band offsets at a ga2o3(gd2o3)-gaas interface

T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, D. J. Huang

研究成果: 雜誌貢獻會議論文同行評審

5 引文 斯高帕斯(Scopus)


We report the energy band offsets at a GaiOjCGdjO^J-GaAs interface. The valence-band offset (AEy) is ~ 2.6 eV, measured by soft x-ray photoemission spectroscopy. Analysis of the current-voltage characteristics of a Pt-GajOjfGdiO-GaAs MOS (metal-oxide-semiconductor) structure, which are dominated by Fowler-Nordheim tunneling, reveals a conduction-band offset (AEc) ~ 1.4 eV at the Ga2O3(Gd2O3)-GaAs interface and an electron effective mass (m) - 0.29 me of the Ga2O3(Gd2Oj) film.

頁(從 - 到)131-135
期刊Materials Research Society Symposium - Proceedings
出版狀態已發佈 - 1999
事件Proceedings of the 1999 MRS Spring Meeting - Symposium Z, 'Compound Semiconductor Surface Passivation and Novel Device Processing' - San Francisco, CA, 美国
持續時間: 1999 四月 51999 四月 7

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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