Endurance study of switching characteristics in NiO films

M. D. Lee; C. K. Lo; T. Y. Peng; S. Y. Chen; Y. D. Yao

doi:10.1016/j.jmmm.2006.11.075

Endurance study of switching characteristics in NiO films

M. D. Lee^*
, C. K. Lo
, T. Y. Peng
, S. Y. Chen
, Y. D. Yao

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

原文	英語
頁（從 - 到）	e1030-e1031
期刊	Journal of Magnetism and Magnetic Materials
卷	310
發行號	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.11.075
出版狀態	已發佈 - 2007 3月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

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10.1016/j.jmmm.2006.11.075

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title = "Endurance study of switching characteristics in NiO films",

abstract = "Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.",

keywords = "Bi-stable memory switching effect, Nickel oxide, RRAM",

author = "Lee, \{M. D.\} and Lo, \{C. K.\} and Peng, \{T. Y.\} and Chen, \{S. Y.\} and Yao, \{Y. D.\}",

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TY - JOUR

T1 - Endurance study of switching characteristics in NiO films

AU - Lee, M. D.

AU - Lo, C. K.

AU - Peng, T. Y.

AU - Chen, S. Y.

AU - Yao, Y. D.

PY - 2007/3

Y1 - 2007/3

N2 - Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

AB - Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

KW - Bi-stable memory switching effect

KW - Nickel oxide

KW - RRAM

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UR - https://www.scopus.com/pages/publications/33847673185#tab=citedBy

U2 - 10.1016/j.jmmm.2006.11.075

DO - 10.1016/j.jmmm.2006.11.075

M3 - Article

AN - SCOPUS:33847673185

SN - 0304-8853

VL - 310

SP - e1030-e1031

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

Endurance study of switching characteristics in NiO films

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