Endurance study of switching characteristics in NiO films

M. D. Lee, C. K. Lo, T. Y. Peng, S. Y. Chen, Y. D. Yao

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Bi-stable switching effect has been studied in nickel oxide films with three different thicknesses. The best sample of our experiments was 150-nm NiO film. Its resistance ratio between high and low states was 3.6 in endurance measurement. The maximum resistance ratio in I-V curve could reach two orders of magnitude, and it could endure over 200 times of reverse processes with the ratio remaining about 1.46. This indicates that the nickel oxide has potential to be a promising material on resistance random access memory.

原文英語
頁(從 - 到)e1030-e1031
期刊Journal of Magnetism and Magnetic Materials
310
發行號2 SUPPL. PART 3
DOIs
出版狀態已發佈 - 2007 三月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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