Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C. Y. Liao; K. Y. Hsiang; Z. F. Lou; H. C. Tseng; C. Y. Lin; Z. X. Li; F. C. Hsieh; C. C. Wang; F. S. Chang; W. C. Ray; Y. Y. Tseng; S. T. Chang; T. C. Chen; M. H. Lee

doi:10.1109/VLSITechnologyandCir46769.2022.9830345

Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C. Y. Liao, K. Y. Hsiang, Z. F. Lou, H. C. Tseng, C. Y. Lin, Z. X. Li, F. C. Hsieh, C. C. Wang, F. S. Chang, W. C. Ray, Y. Y. Tseng, S. T. Chang, T. C. Chen, M. H. Lee^*

^*此作品的通信作者

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

12 引文斯高帕斯（Scopus）

摘要

After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.

原文	英語
主出版物標題	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	393-394
頁數	2
ISBN（電子）	9781665497725
DOIs	https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345
出版狀態	已發佈 - 2022
事件	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, 美国持續時間: 2022 6月 12 → 2022 6月 17

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2022-June
ISSN（列印）	0743-1562

會議

會議	2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區	美国
城市	Honolulu
期間	2022/06/12 → 2022/06/17

ASJC Scopus subject areas

電氣與電子工程

存取文件

10.1109/VLSITechnologyandCir46769.2022.9830345

其它文件與鏈接

引用此

Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Tseng, H. C., Lin, C. Y., Li, Z. X., Hsieh, F. C., Wang, C. C., Chang, F. S., Ray, W. C., Tseng, Y. Y., Chang, S. T., Chen, T. C., & Lee, M. H. (2022). Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 (頁 393-394). (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345

Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. / Liao, C. Y.; Hsiang, K. Y.; Lou, Z. F. 等.
2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 393-394 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Liao, CY, Hsiang, KY, Lou, ZF, Tseng, HC, Lin, CY, Li, ZX, Hsieh, FC, Wang, CC, Chang, FS, Ray, WC, Tseng, YY, Chang, ST, Chen, TC & Lee, MH 2022, Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Digest of Technical Papers - Symposium on VLSI Technology, 卷 2022-June, Institute of Electrical and Electronics Engineers Inc., 頁 393-394, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022, Honolulu, 美国, 2022/06/12. https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830345

Liao CY, Hsiang KY, Lou ZF, Tseng HC, Lin CY, Li ZX 等. Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. 於 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 393-394. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnologyandCir46769.2022.9830345

Liao, C. Y. ; Hsiang, K. Y. ; Lou, Z. F. 等. / Endurance > 10¹¹Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., 2022. 頁 393-394 (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{eb28273c486c49f7bfca220e57070bd4,

title = "Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM",

abstract = "After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.",

author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Lou, {Z. F.} and Tseng, {H. C.} and Lin, {C. Y.} and Li, {Z. X.} and Hsieh, {F. C.} and Wang, {C. C.} and Chang, {F. S.} and Ray, {W. C.} and Tseng, {Y. Y.} and Chang, {S. T.} and Chen, {T. C.} and Lee, {M. H.}",

note = "Funding Information: Acknowledgments: This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under grants 110-2218-E-A49-014-MBK, 110-2218-E-003-005, and 110-2622-8-002-014. The process was supported by the Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",

year = "2022",

doi = "10.1109/VLSITechnologyandCir46769.2022.9830345",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "393--394",

booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",

}

TY - GEN

T1 - Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Lou, Z. F.

AU - Tseng, H. C.

AU - Lin, C. Y.

AU - Li, Z. X.

AU - Hsieh, F. C.

AU - Wang, C. C.

AU - Chang, F. S.

AU - Ray, W. C.

AU - Tseng, Y. Y.

AU - Chang, S. T.

AU - Chen, T. C.

AU - Lee, M. H.

N1 - Funding Information: Acknowledgments: This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under grants 110-2218-E-A49-014-MBK, 110-2218-E-003-005, and 110-2622-8-002-014. The process was supported by the Taiwan Semiconductor Research Institute (TSRI) & Nano Facility Center (NFC), Taiwan. Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.

AB - After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.

UR - http://www.scopus.com/inward/record.url?scp=85135231232&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85135231232&partnerID=8YFLogxK

U2 - 10.1109/VLSITechnologyandCir46769.2022.9830345

DO - 10.1109/VLSITechnologyandCir46769.2022.9830345

M3 - Conference contribution

AN - SCOPUS:85135231232

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 393

EP - 394

BT - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022

Y2 - 12 June 2022 through 17 June 2022

ER -