Endurance > 1011Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C. Y. Liao, K. Y. Hsiang, Z. F. Lou, H. C. Tseng, C. Y. Lin, Z. X. Li, F. C. Hsieh, C. C. Wang, F. S. Chang, W. C. Ray, Y. Y. Tseng, S. T. Chang, T. C. Chen, M. H. Lee*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

2 引文 斯高帕斯(Scopus)

摘要

After 1011 high endurance cycles with memory window (MW) =0.9 V is achieved for the 3D gate-all-around (GAA) nanosheet (NS) ferroelectric field-effect transistor (FeFET) based on double-HZO; the aim is to homogenize the corner field and mitigate dead zones. The interlayer Al2O3 or TiN in the double-HZO exhibits MW enhancement or low access voltage, respectively. The proposed MFMFS GAA-FeFET demonstrates a low VP/E = ±3.5 V (±2.3 MV/cm), large MW = 1.3 V, >1011 robust endurance cycles, and stable storage with data retention of >2×104 s; therefore, physical dimension scaling of the embedded nonvolatile memory (eNVM) is feasible for future generations.

原文英語
主出版物標題2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面393-394
頁數2
ISBN(電子)9781665497725
DOIs
出版狀態已發佈 - 2022
事件2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, 美国
持續時間: 2022 6月 122022 6月 17

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2022-June
ISSN(列印)0743-1562

會議

會議2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
國家/地區美国
城市Honolulu
期間2022/06/122022/06/17

ASJC Scopus subject areas

  • 電氣與電子工程

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