Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

Ya Ju Lee; Chia Jung Lee; Chih Hao Chen; Tien Chang Lu; Hao Chung Kuo

doi:10.1109/JSTQE.2010.2064287

Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

Ya Ju Lee^*, Chia Jung Lee, Chih Hao Chen, Tien Chang Lu, Hao Chung Kuo

^*此作品的通信作者

光電工程研究所

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (I_O = 2×10^-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm² (I_O1=1×10 ^-25AIO₂=1×10^-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

原文	英語
文章編號	5579987
頁（從 - 到）	985-989
頁數	5
期刊	IEEE Journal on Selected Topics in Quantum Electronics
卷	17
發行號	4
DOIs	https://doi.org/10.1109/JSTQE.2010.2064287
出版狀態	已發佈 - 2011 7月

ASJC Scopus subject areas

原子與分子物理與光學
電氣與電子工程

存取文件

10.1109/JSTQE.2010.2064287

其它文件與鏈接

引用此

@article{077b4a3b62bb497799ab77aa153a7240,

title = "Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect",

abstract = "The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.",

keywords = "Light-emitting diode (LED), nanorod, tunneling effect",

author = "Lee, {Ya Ju} and Lee, {Chia Jung} and Chen, {Chih Hao} and Lu, {Tien Chang} and Kuo, {Hao Chung}",

note = "Funding Information: Manuscript received June 28, 2010; revised July 20, 2010; accepted July 29, 2010. Date of publication September 20, 2010; date of current version August 5, 2011. This work was supported by the National Science Council of the Republic of China in Taiwan under Contract NSC-98-2112-M003-001-MY2.",

year = "2011",

month = jul,

doi = "10.1109/JSTQE.2010.2064287",

language = "English",

volume = "17",

pages = "985--989",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Elucidating the physical property of the InGaN nanorod light-emitting diode

T2 - Large tunneling effect

AU - Lee, Ya Ju

AU - Lee, Chia Jung

AU - Chen, Chih Hao

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

N1 - Funding Information: Manuscript received June 28, 2010; revised July 20, 2010; accepted July 29, 2010. Date of publication September 20, 2010; date of current version August 5, 2011. This work was supported by the National Science Council of the Republic of China in Taiwan under Contract NSC-98-2112-M003-001-MY2.

PY - 2011/7

Y1 - 2011/7

N2 - The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

AB - The current-voltage (I-V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2×10-9A is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 ×300μm2 (IO1=1×10 -25AIO2=1×10-14A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.

KW - Light-emitting diode (LED)

KW - nanorod

KW - tunneling effect

UR - http://www.scopus.com/inward/record.url?scp=80051676671&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051676671&partnerID=8YFLogxK

U2 - 10.1109/JSTQE.2010.2064287

DO - 10.1109/JSTQE.2010.2064287

M3 - Article

AN - SCOPUS:80051676671

SN - 1077-260X

VL - 17

SP - 985

EP - 989

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

M1 - 5579987

ER -

Elucidating the physical property of the InGaN nanorod light-emitting diode: Large tunneling effect

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此