Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

C. W. Pao; P. D. Babu; H. M. Tsai; J. W. Chiou; S. C. Ray; S. C. Yang; F. Z. Chien; W. F. Pong; M. H. Tsai; C. W. Hsu; L. C. Chen; C. C. Chen; K. H. Chen; H. J. Lin; J. F. Lee; J. H. Guo

doi:10.1063/1.2207836

Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

C. W. Pao, P. D. Babu, H. M. Tsai, J. W. Chiou, S. C. Ray, S. C. Yang, F. Z. Chien, W. F. Pong^*, M. H. Tsai, C. W. Hsu, L. C. Chen, C. C. Chen, K. H. Chen, H. J. Lin, J. F. Lee, J. H. Guo

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

21 引文斯高帕斯（Scopus）

摘要

Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.

原文	英語
文章編號	223113
期刊	Applied Physics Letters
卷	88
發行號	22
DOIs	https://doi.org/10.1063/1.2207836
出版狀態	已發佈 - 2006 5月 29

ASJC Scopus subject areas

物理與天文學（雜項）

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Pao, C. W., Babu, P. D., Tsai, H. M., Chiou, J. W., Ray, S. C., Yang, S. C., Chien, F. Z., Pong, W. F., Tsai, M. H., Hsu, C. W., Chen, L. C., Chen, C. C., Chen, K. H., Lin, H. J., Lee, J. F., & Guo, J. H. (2006). Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy. Applied Physics Letters, 88(22), 文章 223113. https://doi.org/10.1063/1.2207836

Pao, CW, Babu, PD, Tsai, HM, Chiou, JW, Ray, SC, Yang, SC, Chien, FZ, Pong, WF, Tsai, MH, Hsu, CW, Chen, LC, Chen, CC, Chen, KH, Lin, HJ, Lee, JF & Guo, JH 2006, 'Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy', Applied Physics Letters, 卷 88, 編號 22, 223113. https://doi.org/10.1063/1.2207836

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title = "Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy",

abstract = "Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.",

author = "Pao, {C. W.} and Babu, {P. D.} and Tsai, {H. M.} and Chiou, {J. W.} and Ray, {S. C.} and Yang, {S. C.} and Chien, {F. Z.} and Pong, {W. F.} and Tsai, {M. H.} and Hsu, {C. W.} and Chen, {L. C.} and Chen, {C. C.} and Chen, {K. H.} and Lin, {H. J.} and Lee, {J. F.} and Guo, {J. H.}",

year = "2006",

month = may,

day = "29",

doi = "10.1063/1.2207836",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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T1 - Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

AU - Pao, C. W.

AU - Babu, P. D.

AU - Tsai, H. M.

AU - Chiou, J. W.

AU - Ray, S. C.

AU - Yang, S. C.

AU - Chien, F. Z.

AU - Pong, W. F.

AU - Tsai, M. H.

AU - Hsu, C. W.

AU - Chen, L. C.

AU - Chen, C. C.

AU - Chen, K. H.

AU - Lin, H. J.

AU - Lee, J. F.

AU - Guo, J. H.

PY - 2006/5/29

Y1 - 2006/5/29

N2 - Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.

AB - Nitrogen (N) and metal (Al, Ga, and In) K -edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III-nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.

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ER -

Electronic structures of group-III-nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

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