@article{0e3966b55c654c75992e3d754589adec,
title = "Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy",
abstract = "Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.",
author = "Chiou, \{J. W.\} and Jan, \{J. C.\} and Tsai, \{H. M.\} and Pong, \{W. F.\} and Tsai, \{M. H.\} and Hong, \{I. H.\} and R. Klauser and Lee, \{J. F.\} and Hsu, \{C. W.\} and Lin, \{H. M.\} and Chen, \{C. C.\} and Shen, \{C. H.\} and Chen, \{L. C.\} and Chen, \{K. H.\}",
year = "2003",
month = jun,
day = "2",
doi = "10.1063/1.1579871",
language = "English",
volume = "82",
pages = "3949--3951",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "22",
}