Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy

J. W. Chiou, J. C. Jan, H. M. Tsai, W. F. Pong*, M. H. Tsai, I. H. Hong, R. Klauser, J. F. Lee, C. W. Hsu, H. M. Lin, C. C. Chen, C. H. Shen, L. C. Chen, K. H. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

36 引文 斯高帕斯(Scopus)

摘要

Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.

原文英語
頁(從 - 到)3949-3951
頁數3
期刊Applied Physics Letters
82
發行號22
DOIs
出版狀態已發佈 - 2003 6月 2

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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