@article{0e3966b55c654c75992e3d754589adec,
title = "Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy",
abstract = "Information on the electronic structures of the gallium nitride (GaN) nanowires and thin films was obtained by employing x-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM). The apparent depression of the SPEM intensity for the nanowires was not interpreted as a decrease of the density of valence-band states. The transition probabilities were enhanced in the nanowires.",
author = "Chiou, {J. W.} and Jan, {J. C.} and Tsai, {H. M.} and Pong, {W. F.} and Tsai, {M. H.} and Hong, {I. H.} and R. Klauser and Lee, {J. F.} and Hsu, {C. W.} and Lin, {H. M.} and Chen, {C. C.} and Shen, {C. H.} and Chen, {L. C.} and Chen, {K. H.}",
year = "2003",
month = jun,
day = "2",
doi = "10.1063/1.1579871",
language = "English",
volume = "82",
pages = "3949--3951",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",
}