@article{eb2a8e3340b648e29aca8967cc9537ba,
title = "Electron spin injection into GaAs from ferromagnetic contacts in remanence",
abstract = "We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.",
author = "Gerhardt, {N. C.} and S. H{\"o}vel and C. Brenner and Hofmann, {M. R.} and Lo, {F. Y.} and D. Reuter and Wieck, {A. D.} and E. Schuster and W. Keune and K. Westerholt",
note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Sonderforschungsbereich 491). We thank T. Last, M. Sostarich, and U. Kunze for stimulating discussions, and U. v. H{\"o}rsten and T. Mennecke for valuable technical assistance.",
year = "2005",
month = jul,
day = "18",
doi = "10.1063/1.1996843",
language = "English",
volume = "87",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",
}