Electron spin injection into GaAs from ferromagnetic contacts in remanence

N. C. Gerhardt, S. Hövel, C. Brenner, M. R. Hofmann, F. Y. Lo, D. Reuter, A. D. Wieck, E. Schuster, W. Keune, K. Westerholt

研究成果: 雜誌貢獻期刊論文同行評審

45 引文 斯高帕斯(Scopus)

摘要

We demonstrate electrical spin injection into a (GaIn) AsGaAs light-emitting diode from the remanent state of ferromagnetic contacts in perpendicular geometry. Using a FeTb multilayer structure with perpendicular magnetic anisotropy and a reverse-biased Schottky contact, we achieve a circular polarization degree of the emitted light of 0.75% at 90 K.

原文英語
文章編號032502
期刊Applied Physics Letters
87
發行號3
DOIs
出版狀態已發佈 - 2005 七月 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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