The method of electron paramagnetic resonance (EPR) has been used to study the n-type semiconducting Ru(S1-xSex)2 single crystals grown by the method of chemical vapor transport. A chalcogen point defect model is established to account for the S=1/2 paramagnetic species detected by EPR. This model assumes that an X2-(X=S or Se)-X vacancy pair behaves like an electron donor. The g-factor anisotropy is dependent upon the degree of chalcogen deficiency which is interpreted as due to the formation of a narrow band by the magnetic electrons of the chalcogen defect below the bottom of the conduction band.
|頁（從 - 到）||1796-1799|
|期刊||Journal of Applied Physics|
|出版狀態||已發佈 - 1990|
ASJC Scopus subject areas
- 物理與天文學 (全部)