Electron mobility enhancement using ultrathin pure Ge on Si substrate

Chia Ching Yeo; Byung Jin Cho; F. Gao; S. J. Lee; M. H. Lee; C. Y. Yu; C. W. Liu; L. J. Tang; T. W. Lee

doi:10.1109/LED.2005.855420

Electron mobility enhancement using ultrathin pure Ge on Si substrate

Chia Ching Yeo^*
, Byung Jin Cho
, F. Gao
, S. J. Lee
, M. H. Lee
, C. Y. Yu
, C. W. Liu
, L. J. Tang
, T. W. Lee

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

56 引文斯高帕斯（Scopus）

摘要

We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

原文	英語
頁（從 - 到）	761-763
頁數	3
期刊	IEEE Electron Device Letters
卷	26
發行號	10
DOIs	https://doi.org/10.1109/LED.2005.855420
出版狀態	已發佈 - 2005 10月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

存取文件

10.1109/LED.2005.855420

其它文件與鏈接

引用此

@article{54367bac9b66471c9d785c486c47c730,

title = "Electron mobility enhancement using ultrathin pure Ge on Si substrate",

abstract = "We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.",

keywords = "Effective electron mobility, Ge, High-K gate dielectric",

author = "Yeo, \{Chia Ching\} and Cho, \{Byung Jin\} and F. Gao and Lee, \{S. J.\} and Lee, \{M. H.\} and Yu, \{C. Y.\} and Liu, \{C. W.\} and Tang, \{L. J.\} and Lee, \{T. W.\}",

year = "2005",

month = oct,

doi = "10.1109/LED.2005.855420",

language = "English",

volume = "26",

pages = "761--763",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Electron mobility enhancement using ultrathin pure Ge on Si substrate

AU - Yeo, Chia Ching

AU - Cho, Byung Jin

AU - Gao, F.

AU - Lee, S. J.

AU - Lee, M. H.

AU - Yu, C. Y.

AU - Liu, C. W.

AU - Tang, L. J.

AU - Lee, T. W.

PY - 2005/10

Y1 - 2005/10

N2 - We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

AB - We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

KW - Effective electron mobility

KW - Ge

KW - High-K gate dielectric

UR - https://www.scopus.com/pages/publications/27144452065

UR - https://www.scopus.com/pages/publications/27144452065#tab=citedBy

U2 - 10.1109/LED.2005.855420

DO - 10.1109/LED.2005.855420

M3 - Article

AN - SCOPUS:27144452065

SN - 0741-3106

VL - 26

SP - 761

EP - 763

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Electron mobility enhancement using ultrathin pure Ge on Si substrate

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此