Electron mobility enhancement using ultrathin pure Ge on Si substrate

Chia Ching Yeo*, Byung Jin Cho, F. Gao, S. J. Lee, M. H. Lee, C. Y. Yu, C. W. Liu, L. J. Tang, T. W. Lee

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

54 引文 斯高帕斯(Scopus)

摘要

We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.

原文英語
頁(從 - 到)761-763
頁數3
期刊IEEE Electron Device Letters
26
發行號10
DOIs
出版狀態已發佈 - 2005 10月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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