摘要
We demonstrate enhancement of electron mobility in nMOSFET using an ultrathin pure Ge crystal channel layer directly grown on a bulk Si wafer. A thin Si crystal layer is also grown on top of a Ge crystal channel layer as a capping layer. Using the Si/Ge/Si structure, a maximum 2.2X enhancement in electron mobility is achieved while good gate dielectric properties and junction qualities of bulk Si devices are maintained.
原文 | 英語 |
---|---|
頁(從 - 到) | 761-763 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 26 |
發行號 | 10 |
DOIs | |
出版狀態 | 已發佈 - 2005 10月 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 電子、光磁材料
- 電氣與電子工程