Electron field emission property of boron doping nano-crystalline diamond

Y. C. Lee; S. J. Lin; J. H. Huang; C. T. Chia; I. N. Lin

Electron field emission property of boron doping nano-crystalline diamond

Y. C. Lee, S. J. Lin, J. H. Huang, C. T. Chia, I. N. Lin^*

^*此作品的通信作者

物理學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp²-bonded grain boundaries in finer grain nano-diamond films.

原文	英語
主出版物標題	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
編輯	A.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong
頁面	126-127
頁數	2
出版狀態	已發佈 - 2004
事件	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, 美国持續時間: 2004 7月 11 → 2004 7月 16

出版系列

名字	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004

其他

其他	Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
國家/地區	美国
城市	Cambridge, MA
期間	2004/07/11 → 2004/07/16

ASJC Scopus subject areas

一般工程

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引用此

Lee, Y. C., Lin, S. J., Huang, J. H., Chia, C. T., & Lin, I. N. (2004). Electron field emission property of boron doping nano-crystalline diamond. 於 A. I. Akinwande, L.-Y. Chen, I. Kymissis, & C.-Y. Hong (編輯), Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 (頁 126-127). (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

Electron field emission property of boron doping nano-crystalline diamond. / Lee, Y. C.; Lin, S. J.; Huang, J. H. 等.
Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. 編輯 / A.I. Akinwande; L.-Y. Chen; I. Kymissis; C.-Y. Hong. 2004. p. 126-127 (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Lee, YC, Lin, SJ, Huang, JH, Chia, CT & Lin, IN 2004, Electron field emission property of boron doping nano-crystalline diamond. 於 AI Akinwande, L-Y Chen, I Kymissis & C-Y Hong (編輯), Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004, 頁 126-127, Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004, Cambridge, MA, 美国, 2004/07/11.

Lee YC, Lin SJ, Huang JH, Chia CT, Lin IN. Electron field emission property of boron doping nano-crystalline diamond. 於 Akinwande AI, Chen LY, Kymissis I, Hong CY, 編輯, Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. 2004. p. 126-127. (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

Lee, Y. C. ; Lin, S. J. ; Huang, J. H. 等. / Electron field emission property of boron doping nano-crystalline diamond. Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004. 編輯 / A.I. Akinwande ; L.-Y. Chen ; I. Kymissis ; C.-Y. Hong. 2004. 頁 126-127 (Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004).

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title = "Electron field emission property of boron doping nano-crystalline diamond",

abstract = "Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp2-bonded grain boundaries in finer grain nano-diamond films.",

author = "Lee, {Y. C.} and Lin, {S. J.} and Huang, {J. H.} and Chia, {C. T.} and Lin, {I. N.}",

year = "2004",

language = "English",

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series = "Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004",

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editor = "A.I. Akinwande and L.-Y. Chen and I. Kymissis and C.-Y. Hong",

booktitle = "Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004",

note = "Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 ; Conference date: 11-07-2004 Through 16-07-2004",

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N2 - Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp2-bonded grain boundaries in finer grain nano-diamond films.

AB - Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp2-bonded grain boundaries in finer grain nano-diamond films.

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Electron field emission property of boron doping nano-crystalline diamond

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