Electron field emission property of boron doping nano-crystalline diamond

Y. C. Lee, S. J. Lin, J. H. Huang, C. T. Chia, I. N. Lin*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Electron field emission property of boron doping nano-crystalline diamond was discussed. Various techniques were applied to enhance the nucleation rate for growing diamond films. NCD films of various nucleation conditions were prepared from methane-hydrogen mixture by microwave plasma enhanced chemical vapor deposition (PECVD) technique. The morphologies and bonding structures of these films were characterized by field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray diffraction (XRD). The main factor modifying the electron field emission properties is assumed to be the increase in proportion of sp2-bonded grain boundaries in finer grain nano-diamond films.

原文英語
主出版物標題Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
編輯A.I. Akinwande, L.-Y. Chen, I. Kymissis, C.-Y. Hong
頁面126-127
頁數2
出版狀態已發佈 - 2004 十二月 1
事件Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004 - Cambridge, MA, 美国
持續時間: 2004 七月 112004 七月 16

出版系列

名字Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004

其他

其他Technical Digest of the 17th International Vacuum Nanoelectronics Conference, IVNC 2004
國家/地區美国
城市Cambridge, MA
期間2004/07/112004/07/16

ASJC Scopus subject areas

  • 工程 (全部)

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