Electron detrapping in thin hafnium silicate and nitrided hafnium silicate gate dielectric stacks

Heng Sheng Huang*, Piyas Samanta, Tsung Jian Tzeng, Shuang Yuan Chen, Chuan Hsi Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

The kinetics of zero-field and field-induced detrapping of electrons trapped in HfSi xO y and HfSiON after positive bias stress on n +-polycrystalline silicon (polySi) gate of n-type metal-oxide-semiconductor (nMOS) capacitors are experimentally investigated. The self detrapping follows a simple logarithmic relation with time while field-induced detrapping upon reversing the stress voltage obeys a simple first-order exponential decay suggesting mono energetic shallow traps associated with tunnel emission of trapped electrons. Finally, our investigation raises questions about the validity of the widely used distributed capture cross section model of electron traps to explain the threshold voltage instability in MOS devices with hafnium silicate gate stacks.

原文英語
文章編號023501
期刊Applied Physics Letters
100
發行號2
DOIs
出版狀態已發佈 - 2012 一月 9

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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