@article{14eba34d636b4fbebe579af264c3c9c6,
title = "Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors",
abstract = "We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.",
keywords = "Mechanical strain, Nanocrystalline silicon (nc-Si), Semiconductor device measurements, Silicon, Stability, Thin-film transistors (TFTs)",
author = "Chiu, \{I. Chung\} and Huang, \{Jung Jie\} and Chen, \{Yung Pei\} and Cheng, \{I. Chun\} and Chen, \{Jian Z.\} and Lee, \{Min Hung\}",
note = "Funding Information: Manuscript received October 29, 2009. First published February 2, 2010; current version published February 24, 2010. This work was supported by the Display Technology Center, Industrial Technology Research Institute, Taiwan. The works of I-C. Cheng and J. Z. Chen were supported by the National Science Council, Taiwan, under Grants NSC 98-2120-M-002-005 and NSC 98-2221-E-002-169, respectively. The review of this letter was arranged by Editor A. Nathan.",
year = "2010",
month = mar,
doi = "10.1109/LED.2009.2039023",
language = "English",
volume = "31",
pages = "222--224",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}