Electromechanical stability of flexible nanocrystalline-silicon thin-film transistors

I. Chung Chiu*, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng, Jian Z. Chen, Min Hung Lee

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

We have demonstrated inverted staggered bottom-gate back-channel-passivated hydrogenated nanocrystalline-silicon thin-film transistors (TFTs) on colorless polyimide foil substrates. Their electrical performance and stability have been investigated under mechanical flexing. The electron field-effect mobilities and threshold voltages of these TFTs increased as the applied tensile strain increased, but their electrical stability deteriorated under mechanical strain.

原文英語
文章編號5404409
頁(從 - 到)222-224
頁數3
期刊IEEE Electron Device Letters
31
發行號3
DOIs
出版狀態已發佈 - 2010 三月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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