We report room-temperature electroluninescence at Si bandgap energy from Metal-Oxide-Semiconductor (MOS) tunneling diodes. The ultrathin gate oxide with thickness 1 ∼ 3 nm was grown by rapid thermal oxidation (RTO) to allow significant current to tunnel through. The measured EL efficiency of the MOS tunneling diodes increases with the injection current and could be in the order of 10-5, which exceeds the limitation imposed byindirect bandgap nature of Si. We also study the temperature dependence of the electroluminescence and photoluminescence. The electroluminescence is much less dependent on temperature than photoluminescence from Si. The applied external field that results in the accumulation of majority carriers at Si/SiO2 interface in the case of electroluminescence could be the reason for such difference. The involved physics such as optical phonon, interface roughness, localized carriers, and exciton radiative recombination are used to explain the electroluminescence from silicon MOS tunneling diodes.
|頁（從 - 到）||147-154|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已發佈 - 2001|
|事件||Silicon-based and Hybrid Optoelectronics III - San Jose, CA, 美国|
持續時間: 2001 1月 23 → 2001 1月 24
ASJC Scopus subject areas