Electroluminescence at Si bandgap energy from metal-oxide-semiconductor tunneling diodes

C. F. Lin*, M. J. Chen, M. H. Lee, C. Liu


研究成果: 雜誌貢獻會議論文同行評審


We report room-temperature electroluninescence at Si bandgap energy from Metal-Oxide-Semiconductor (MOS) tunneling diodes. The ultrathin gate oxide with thickness 1 ∼ 3 nm was grown by rapid thermal oxidation (RTO) to allow significant current to tunnel through. The measured EL efficiency of the MOS tunneling diodes increases with the injection current and could be in the order of 10-5, which exceeds the limitation imposed byindirect bandgap nature of Si. We also study the temperature dependence of the electroluminescence and photoluminescence. The electroluminescence is much less dependent on temperature than photoluminescence from Si. The applied external field that results in the accumulation of majority carriers at Si/SiO2 interface in the case of electroluminescence could be the reason for such difference. The involved physics such as optical phonon, interface roughness, localized carriers, and exciton radiative recombination are used to explain the electroluminescence from silicon MOS tunneling diodes.

頁(從 - 到)147-154
期刊Proceedings of SPIE - The International Society for Optical Engineering
出版狀態已發佈 - 2001
事件Silicon-based and Hybrid Optoelectronics III - San Jose, CA, 美国
持續時間: 2001 1月 232001 1月 24

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程


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