Electrodeless wet etching of GaN assisted with chopped ultraviolet light

Z. H. Hwang, J. M. Hwang, H. L. Hwang, Wei-Hsiu Hung

研究成果: 雜誌貢獻期刊論文同行評審

32 引文 斯高帕斯(Scopus)

摘要

The electrodeless photoelectrochemical (PEC) wet etching of GaN, photoassisted with chopped ultraviolet light, was investigated. The scanning electron microscopy was used to study the etched surfaces of GaN. It was observed that the rate of recombination of electrons and holes at a dislocation defect was greater than for crystalline GaN, resulting in a rough etched surface with pyramids. A shorter period of chopped UV irradiation was observed to offer a smoother etched surface via a decrease of the carrier recombination in dislocation.

原文英語
頁(從 - 到)3759-3761
頁數3
期刊Applied Physics Letters
84
發行號19
DOIs
出版狀態已發佈 - 2004 五月 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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