Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures

INIS

• modulation 100%
• gallium arsenides 100%
• quantum states 100%
• quantum wells 100%
• wave functions 100%
• barriers 66%
• strains 66%
• comparative evaluations 33%
• layers 33%
• efficiency 33%
• interfaces 33%
• thickness 33%
• spectroscopy 33%
• states (energy) 33%
• space charge 33%
• electric fields 33%
• buffers 33%
• confinement 33%
• mbe 33%
• energy-level transitions 33%

Engineering

• Gallium Arsenide 100%
• Quantum State 100%
• Quantum Well 100%
• Space Charge Region 33%
• Modulation Efficiency 33%
• Internal Electric Field 33%
• Photoreflectance 33%
• Spectral Feature 33%
• Buffer Layer 33%