Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures

J. R. Lee, C. R. Lu, H. L. Liu, H. H. Lin, L. W. Sun

研究成果: 雜誌貢獻Conference article

摘要

Electrooptical properties of InGaNAs/GaAs quantum well structures were investigated by photoreflectance spectroscopy. The MBE grown structures consist of a central InGa-NAs well, GaAs barriers, and GaAsN strain compensating buffer layers of different thickness. More quantum states and extended wave functions in the system with strain relief GaAsN barriers due to broader and lower confinement profile. Particular electro-modulated spectral features corresponding to excitonic interband transitions are enhanced. Compared with the numerically calculated quantum state energies and wave functions, the electromodulation enhanced transitions were those involving quantum states with wave functions distribute in wider regions and extend more from the InGaNAs well into the space charge region near interfaces. It was the internal electric field near the heterointerfaces strongly enhanced the electro-modulation efficiency.

原文英語
頁(從 - 到)3054-3056
頁數3
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
5
發行號9
DOIs
出版狀態已發佈 - 2008 十二月 1
事件34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, 日本
持續時間: 2007 十月 152007 十月 18

ASJC Scopus subject areas

  • Condensed Matter Physics

指紋 深入研究「Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures」主題。共同形成了獨特的指紋。

  • 引用此