Electrical transport and carrier density collapse in doped manganite thin films

L. M. Wang, H. C. Yang, H. E. Horng

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

Based on the current-carrier-density-collapse theory, an expression is proposed for resistivity as a function of temperature and magnetic field. Our low-temperature resistivity data on high-quality epitaxial thin films of doped Mn oxides can be well fitted by the derived equation. At temperatures above (formula presented) the zero-field resistivity data can be also well explained by the carrier-density-collapse model. Moreover, the features of electrical transport in doped Mn oxides such as a dominant (formula presented) dependence of low-temperature resistivity, and a strong (formula presented) dependence of magnetoresistance at temperatures above (formula presented) are successfully interpreted in accordance with our deduction. We provide strong evidence to support that the carrier-density collapse can well describe the electrical transport in doped manganites.

原文英語
期刊Physical Review B - Condensed Matter and Materials Physics
64
發行號22
DOIs
出版狀態已發佈 - 2001
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

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