Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Shea Jue Wang, Ssu Hao Peng, You Ming Hu, Shuang Yuan Chen, Heng Sheng Huang, Mu Chun Wang, Hsin Chia Yang, Chuan Hsi Liu

研究成果: 會議貢獻類型

3 引文 斯高帕斯(Scopus)

摘要

The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization is a possible way in increasing the mobility value up to 450 cm2/V·sec. However, the electrical characteristics for them face the identical trend with temperature heating is degraded. However, the degradation of a-Si:H TFT is worse than that of poly-Si TFT when the device temperature is raised. In this study, the a-Si:H TFTs and poly-Si TFTs with furnace and green laser anneal were chosen. Comparing the transfer characteristics, subthreshold swing (S.S.), threshold voltage (V th), ON/OFF ratio, field effect mobility (μFE), interface state density (Nit) with temperature effect, some trends are very interesting. The bulk traps were recovered by pseudo-crystallization with increasing temperature, and the transfer characteristics become better than the initial.

原文英語
頁面309-312
頁數4
DOIs
出版狀態已發佈 - 2013 五月 27
事件2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣
持續時間: 2013 二月 252013 二月 26

其他

其他2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家臺灣
城市Kaohsiung
期間13/2/2513/2/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • 引用此

    Wang, S. J., Peng, S. H., Hu, Y. M., Chen, S. Y., Huang, H. S., Wang, M. C., Yang, H. C., & Liu, C. H. (2013). Electrical performance of a-Si:H and poly-Si TFTs with heating stress. 309-312. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, 臺灣. https://doi.org/10.1109/ISNE.2013.6512353