Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

Y. C. Chiu, Z. W. Zheng, C. H. Cheng*, P. C. Chen, S. S. Yen, C. C. Fan, H. H. Hsu, H. L. Kao, C. Y. Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of ~70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

原文英語
文章編號188
期刊Applied Physics A: Materials Science and Processing
123
發行號3
DOIs
出版狀態已發佈 - 2017 三月

ASJC Scopus subject areas

  • 化學 (全部)
  • 材料科學(全部)

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