Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

Chuan Hsi Liu; Fu Chien Chiu

doi:10.1109/LED.2006.887626

Electrical characterization of ZrO₂/Si interface properties in MOSFETs with ZrO₂ gate dielectrics

Chuan Hsi Liu^*
, Fu Chien Chiu

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

14 引文斯高帕斯（Scopus）

摘要

MOSFETs incorporating ZrO₂ gate dielectrics were fabricated. The I_DS-V_DS,I_DS-V_GS, and gated diode characteristics were analyzed to investigate the ZrO₂ interface properties. The interface trap density (D_it) was determined to be about 7.4 × 10¹² cm^-2 · eV^-1 using subthreshold swing measurement. The surface-recombination velocity (S_O)and the minority carrier lifetime in the field-induced depletion region (τ_0,FIJ measured from the gated diodes were about 3.5 × 10³ cm/s and 2.6 × 10⁶ s respectively. The effective capture cross section of surface state (σ_s) was determined to be about 5.8 × 10^-16 cm² using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO₂ gate oxides was also made.

原文	英語
頁（從 - 到）	62-64
頁數	3
期刊	IEEE Electron Device Letters
卷	28
發行號	1
DOIs	https://doi.org/10.1109/LED.2006.887626
出版狀態	已發佈 - 2007 1月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/LED.2006.887626

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title = "Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics",

abstract = "MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.",

keywords = "Gated diode, High-κ dielectrics, ZrO",

author = "Liu, \{Chuan Hsi\} and Chiu, \{Fu Chien\}",

note = "Funding Information: Manuscript received August 1, 2006. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC 95-2218-E-130-001 and in part by the Technology Development Program of Academia (TDPA) Department of Industrial Technology (DOIT) Ministry of Economic Affairs (MOEA) under Contract 95-EC-17-A-01-S1-047. The review of this letter was arranged by Editor A. Chatterjee.",

year = "2007",

month = jan,

doi = "10.1109/LED.2006.887626",

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AU - Liu, Chuan Hsi

AU - Chiu, Fu Chien

N1 - Funding Information: Manuscript received August 1, 2006. This work was supported in part by the National Science Council, Taiwan, R.O.C., under Contract NSC 95-2218-E-130-001 and in part by the Technology Development Program of Academia (TDPA) Department of Industrial Technology (DOIT) Ministry of Economic Affairs (MOEA) under Contract 95-EC-17-A-01-S1-047. The review of this letter was arranged by Editor A. Chatterjee.

PY - 2007/1

Y1 - 2007/1

N2 - MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

AB - MOSFETs incorporating ZrO2 gate dielectrics were fabricated. The IDS-VDS,IDS-VGS, and gated diode characteristics were analyzed to investigate the ZrO2 interface properties. The interface trap density (Dit) was determined to be about 7.4 × 1012 cm-2 · eV-1 using subthreshold swing measurement. The surface-recombination velocity (SO)and the minority carrier lifetime in the field-induced depletion region (τ0,FIJ measured from the gated diodes were about 3.5 × 103 cm/s and 2.6 × 106 s respectively. The effective capture cross section of surface state (σs) was determined to be about 5.8 × 10-16 cm2 using the gated diode technique and the subthreshold swing measurement. A comparison with conventional MOSFETs using SiO2 gate oxides was also made.

KW - Gated diode

KW - High-κ dielectrics

KW - ZrO

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JO - IEEE Electron Device Letters

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Electrical characterization of ZrO2/Si interface properties in MOSFETs with ZrO2 gate dielectrics

摘要

ASJC Scopus subject areas

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Electrical characterization of ZrO₂/Si interface properties in MOSFETs with ZrO₂ gate dielectrics