Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Pi Chun Juan, Chuan-Hsi Liu, Cheng Li Lin, Shin Chun Ju, Main Gwo Chen, Ingram Yin Ku Chanf, Jong Hong Lu

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this work, high-k cerium zirconate (CeZrO4) was successfully fabricated by RF magnetron cosputtering with a postannealing temperature of 850°C. The amount of Zr in CeO2 can be well controlled by adjusting the DC power of the Zr target. X-ray photoelectron spectroscopy (XPS) shows that CeZrO4 becomes amorphous with increasing DC power. The intensity of the CeZrO4 phase increases with increasing oxygen content in the plasma. The crystalline phases were confirmed using X-ray diffraction (XRD). The dielectric constant and flatband voltage shift (δVFB) as functions of DC power and oxygen gas flow rate were investigated. The optimum balance between leakage and dielectric constant was considered. The leakage current densities were 3 x 10-3 and 3 x 10-5 A/cm2 obtained at +2 and -2 V biases, respectively. A relative dielectric constant (δr) of 24.3 and an effective oxide thickness (EOT) of 1.7 nm were achieved.

原文英語
期刊Japanese Journal of Applied Physics
48
發行號5 PART 2
DOIs
出版狀態已發佈 - 2009 五月 1

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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