Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

H. W. Chen, S. Y. Chen, K. C. Chen, H. S. Huang, C. H. Liu*, F. C. Chiu, K. W. Liu, K. C. Lin, L. W. Cheng, C. T. Lin, G. H. Ma, S. W. Sun

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

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Material Science