Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics

C. H. Liu, H. W. Chen

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

Metal-oxide-semiconductor (MOS) capacitors incorporating atomic-layer-deposition (ALD) HfZrLaO high-κ gate dielectric were fabricated and investigated. The equivalent oxide thickness (EOT) is 0.68 nm and the gate leakage current density (Jg) is only 9.3 × 10-1 A/cm2. The time-dependence dielectric breakdown (TDDB) behavior agrees with the percolation model, and the TDDB characteristics are consistent with the thermochemical E-model for lifetime projection. The experimental results show that the Weibull slopes are almost independent of capacitor area and stress conditions. The field acceleration parameter (γ) and activation energy (ΔH0) are determined around 5.9-7.0 cm/MV and 0.54-0.60 eV, respectively. At 85 °C, the maximum voltage projected for 10-years TDDB lifetime is 1.87 V.

原文英語
頁(從 - 到)599-602
頁數4
期刊Microelectronics Reliability
50
發行號5
DOIs
出版狀態已發佈 - 2010 五月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 安全、風險、可靠性和品質
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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