@inproceedings{9a12a215230a4fc6a443e3237e4b5734,
title = "Electrical and reliability characteristics in strained-Si mOSFETs",
abstract = "In this study, surface-channel MOSFETs processed on strained-Si on relaxed Si1-xGex virtual substrates feature significantly enhanced carrier mobility (64\% for electrons and 45\% for holes) than that of the bulk-Si control devices. The drain current of the strained-Si nMOSFET increases by 45\% compared to 4.5\% in strained-Si pMOSFET. The strained-Si pMOSFETs surface roughness scattering begins to dominate at a relatively low effective field (∼0.2 MV/cm) that accordingly limits the drive current enhancement of strained-Si pMOSFETs. Furthermore, experimental data indicates that hot carrier and negative bias temperature instability are a potential reliability concern for strained-Si nMOSFETs and pMOSFETs, respectively.",
author = "Yang, \{Chia Cheng\} and Pan, \{Tung Ming\} and Chen, \{Kai Ming\} and Liu, \{Chuan Hsi\}",
year = "2008",
doi = "10.1149/1.2908640",
language = "English",
isbn = "9781566776271",
series = "ECS Transactions",
number = "2",
pages = "271--277",
booktitle = "ECS Transactions - Dielectrics for Nanosystems 3",
edition = "2",
note = "3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting ; Conference date: 18-05-2008 Through 22-05-2008",
}