Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

C. Y. Yu; T. C. Chen; M. H. Lee; S. H. Huang; L. S. Lee; C. W. Liu

Electrical and optical reliability improvement of HfO₂ gate dielectric by deuterium and hydrogen incorporation

C. Y. Yu^*, T. C. Chen, M. H. Lee, S. H. Huang, L. S. Lee, C. W. Liu

^*此作品的通信作者

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Electrical and optical reliability characteristic of Pt/HfO₂ gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO₂ gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO₂ gate stack devices.

原文	英語
頁面	165-168
頁數	4
出版狀態	已發佈 - 2004
對外發佈	是
事件	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 臺灣持續時間: 2004 7月 5 → 2004 7月 8

其他

其他	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
國家/地區	臺灣
期間	2004/07/05 → 2004/07/08

ASJC Scopus subject areas

一般工程

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引用此

Electrical and optical reliability improvement of HfO₂ gate dielectric by deuterium and hydrogen incorporation. / Yu, C. Y.; Chen, T. C.; Lee, M. H. 等.
2004. 165-168 論文發表於 Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, 臺灣.

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

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title = "Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation",

abstract = "Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.",

author = "Yu, {C. Y.} and Chen, {T. C.} and Lee, {M. H.} and Huang, {S. H.} and Lee, {L. S.} and Liu, {C. W.}",

year = "2004",

language = "English",

pages = "165--168",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

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TY - CONF

T1 - Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

AU - Yu, C. Y.

AU - Chen, T. C.

AU - Lee, M. H.

AU - Huang, S. H.

AU - Lee, L. S.

AU - Liu, C. W.

PY - 2004

Y1 - 2004

N2 - Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.

AB - Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.

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M3 - Paper

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T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

摘要

其他

ASJC Scopus subject areas

其它文件與鏈接

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引用此

Electrical and optical reliability improvement of HfO₂ gate dielectric by deuterium and hydrogen incorporation