摘要
Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.
原文 | 英語 |
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頁面 | 165-168 |
頁數 | 4 |
出版狀態 | 已發佈 - 2004 |
對外發佈 | 是 |
事件 | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 臺灣 持續時間: 2004 7月 5 → 2004 7月 8 |
其他
其他 | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 |
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國家/地區 | 臺灣 |
期間 | 2004/07/05 → 2004/07/08 |
ASJC Scopus subject areas
- 一般工程