Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

C. Y. Yu*, T. C. Chen, M. H. Lee, S. H. Huang, L. S. Lee, C. W. Liu

*此作品的通信作者

研究成果: 會議貢獻類型會議論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.

原文英語
頁面165-168
頁數4
出版狀態已發佈 - 2004
對外發佈
事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 臺灣
持續時間: 2004 7月 52004 7月 8

其他

其他Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
國家/地區臺灣
期間2004/07/052004/07/08

ASJC Scopus subject areas

  • 一般工程

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