Electrical and optical reliability improvement of HfO2 gate dielectric by deuterium and hydrogen incorporation

C. Y. Yu, T. C. Chen, M. H. Lee, S. H. Huang, L. S. Lee, C. W. Liu

    研究成果: 會議貢獻類型會議論文同行評審

    1 引文 斯高帕斯(Scopus)

    摘要

    Electrical and optical reliability characteristic of Pt/HfO2 gate stack have been investigated. Incorporating deuterium and hydrogen treatment during post-metallization annealing is employed to improve both the electrical and optical reliability of Pt/HfO2 gate stack. For comparison, deuterium-treated technology provides slightly better reliability improvement on both the electrical and optical reliability of Pt/HfO2 gate stack devices.

    原文英語
    頁面165-168
    頁數4
    出版狀態已發佈 - 2004 十二月 1
    事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 臺灣
    持續時間: 2004 七月 52004 七月 8

    其他

    其他Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
    國家臺灣
    期間2004/07/052004/07/08

    ASJC Scopus subject areas

    • Engineering(all)

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