Electric field geometries dominate quantum transport coupling in silicon nanoring

Tsung Han Lee*, Shu Fen Hu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Investigations on the relation between the geometries of silicon nanodevices and the quantum phenomenon they exhibit, such as the Aharonov-Bohm (AB) effect and the Coulomb blockade, were conducted. An arsenic doped silicon nanoring coupled with a nanowire by electron beam lithography was fabricated. At 1.47K, Coulomb blockade oscillations were observed under modulation from the top gate voltage, and a periodic AB oscillation of ΔB=0.178T was estimated for a ring radius of 86nm under a high sweeping magnetic field. Modulating the flat top gate and the pointed side gate was performed to cluster and separate the many electron quantum dots, which demonstrated that quantum confinement and interference effects coexisted in the doped silicon nanoring.

原文英語
文章編號123712
期刊Journal of Applied Physics
115
發行號12
DOIs
出版狀態已發佈 - 2014 三月 28

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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