Researchers proposed high-performance lead-free perovskite infrared light-emitting diodes (LEDs) based on low-temperature solution-processed CsSnI3 perovskite. Two methods, one-pot solution synthesis method and toluene dripping method were employed to prepare the CsSnI3 films. The CsSnI3 fi lms synthesized via the one-pot solution synthesis method exhibit a sponge-like morphology. The infrared LEDs fabricated using such sponge-like CsSnI 3 fi lms exhibit poor performance.
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