Efficiency enhancement of light extraction in LED with a nano-porous GaP surface

J. M. Hwang; W. H. Hung; H. L. Hwang

doi:10.1109/LPT.2008.918821

Efficiency enhancement of light extraction in LED with a nano-porous GaP surface

J. M. Hwang^*, W. H. Hung, H. L. Hwang

^*此作品的通信作者

化學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 × 10⁸ cm^-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

原文	英語
頁（從 - 到）	608-610
頁數	3
期刊	IEEE Photonics Technology Letters
卷	20
發行號	8
DOIs	https://doi.org/10.1109/LPT.2008.918821
出版狀態	已發佈 - 2008 4月 15

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

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10.1109/LPT.2008.918821

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title = "Efficiency enhancement of light extraction in LED with a nano-porous GaP surface",

abstract = "Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 × 108 cm-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.",

keywords = "Light-emitting diode (LED), Photoelectrochemical (PEC) etching, Surface roughening",

author = "Hwang, {J. M.} and Hung, {W. H.} and Hwang, {H. L.}",

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T1 - Efficiency enhancement of light extraction in LED with a nano-porous GaP surface

AU - Hwang, J. M.

AU - Hung, W. H.

AU - Hwang, H. L.

PY - 2008/4/15

Y1 - 2008/4/15

N2 - Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 × 108 cm-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

AB - Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 × 108 cm-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

KW - Light-emitting diode (LED)

KW - Photoelectrochemical (PEC) etching

KW - Surface roughening

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Efficiency enhancement of light extraction in LED with a nano-porous GaP surface

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