Efficiency enhancement of light extraction in LED with a nano-porous GaP surface

J. M. Hwang*, Wei-Hsiu Hung, H. L. Hwang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

Electrodeless photoelectrochemical etching is developed to produce a nano-porous n-GaP surface. Pores of diameter 300-700 nm are distributed on the surface with a density 1.2 × 108 cm-2. Such a porous surface structure exhibits a short mean free path for the transport of visible light and enhances photon scattering in a red AlInGaP-based light-emitting device. The efficiency of extraction of light emitted from the active layer becomes about 30%-50% greater than that without an etching treatment at a current of 20-40 mA.

原文英語
頁(從 - 到)608-610
頁數3
期刊IEEE Photonics Technology Letters
20
發行號8
DOIs
出版狀態已發佈 - 2008 四月 15

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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