Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

P. C. Juan, C. L. Sun, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang, H. S. Chang

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

指紋 深入研究「Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO<sub>3</sub>)-insulator (HfO<sub>2</sub>)-silicon structures for non-volatile memories」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy