Metal-ferroelectric (Zr-doped BiFeO3)-insulator (HfO 2)-semiconductor (MFIS) structures have been fabricated by magnetron cosputtering technique. The C-V memory windows of MFIS capacitors as functions of insulator film thickness, DC power for Zr, post-annealing temperature were compared. The leakage current that reduces with increasing the DC power results in larger memory window. The memory window increases with increasing HfO 2 insulator thickness due to the effect of charge injection. In addition, the memory window increases with increasing DC power for Zr. A maximum memory window of 1.6 V is obtained at the swept voltage of 8 V. The temperature-dependent conduction currents of MFIS capacitors with Zr-doped BFO thin films were studied.
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