Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

P. C. Juan, C. L. Sun, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang, H. S. Chang

研究成果: 雜誌貢獻文章

4 引文 斯高帕斯(Scopus)

摘要

Metal-ferroelectric (Zr-doped BiFeO3)-insulator (HfO 2)-semiconductor (MFIS) structures have been fabricated by magnetron cosputtering technique. The C-V memory windows of MFIS capacitors as functions of insulator film thickness, DC power for Zr, post-annealing temperature were compared. The leakage current that reduces with increasing the DC power results in larger memory window. The memory window increases with increasing HfO 2 insulator thickness due to the effect of charge injection. In addition, the memory window increases with increasing DC power for Zr. A maximum memory window of 1.6 V is obtained at the swept voltage of 8 V. The temperature-dependent conduction currents of MFIS capacitors with Zr-doped BFO thin films were studied.

原文英語
頁(從 - 到)142-147
頁數6
期刊Microelectronic Engineering
109
DOIs
出版狀態已發佈 - 2013 五月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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