Effects of zirconium substitution on the electrical and physical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for non-volatile memories

P. C. Juan*, C. L. Sun, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang, H. S. Chang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

6 引文 斯高帕斯(Scopus)

摘要

Metal-ferroelectric (Zr-doped BiFeO3)-insulator (HfO 2)-semiconductor (MFIS) structures have been fabricated by magnetron cosputtering technique. The C-V memory windows of MFIS capacitors as functions of insulator film thickness, DC power for Zr, post-annealing temperature were compared. The leakage current that reduces with increasing the DC power results in larger memory window. The memory window increases with increasing HfO 2 insulator thickness due to the effect of charge injection. In addition, the memory window increases with increasing DC power for Zr. A maximum memory window of 1.6 V is obtained at the swept voltage of 8 V. The temperature-dependent conduction currents of MFIS capacitors with Zr-doped BFO thin films were studied.

原文英語
頁(從 - 到)142-147
頁數6
期刊Microelectronic Engineering
109
DOIs
出版狀態已發佈 - 2013

ASJC Scopus subject areas

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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