Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

Chia Ching Wu; Cheng Fu Yang; Yuan Tai Hsieh; Wen Ray Chen; Chin Guo Kuo; Hong Hsin Huang

doi:10.1016/j.ceramint.2011.06.055

Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO₂ thin films

Chia Ching Wu, Cheng Fu Yang^*, Yuan Tai Hsieh, Wen Ray Chen, Chin Guo Kuo, Hong Hsin Huang

^*此作品的通信作者

工業教育學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

TiO₂ thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO₂ bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO₂ and W-TiO ₂ bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO₂ phases were observed in the TiO₂ and W-TiO₂ bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO₂ thin films. The W-TiO₂ bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO₂ and the non-annealed and annealed W-TiO₂ bi-layer thin films were evaluated using (αhν)^1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO₂ bi-layer thin films.

原文	英語
頁（從 - 到）	223-227
頁數	5
期刊	Ceramics International
卷	38
發行號	1
DOIs	https://doi.org/10.1016/j.ceramint.2011.06.055
出版狀態	已發佈 - 2012 1月

ASJC Scopus subject areas

電子、光磁材料
陶瓷和複合材料
製程化學與技術
表面、塗料和薄膜
材料化學

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10.1016/j.ceramint.2011.06.055

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title = "Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films",

abstract = "TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.",

keywords = "A. Films, C. Electrical properties, C. Ferroelectric properties, D. TiO",

author = "Wu, {Chia Ching} and Yang, {Cheng Fu} and Hsieh, {Yuan Tai} and Chen, {Wen Ray} and Kuo, {Chin Guo} and Huang, {Hong Hsin}",

note = "Funding Information: The authors will acknowledge to the financial support of NSC 99-2221-E-390-013-MY2 and the experimental data coordination of C.Y. Huang.",

year = "2012",

month = jan,

doi = "10.1016/j.ceramint.2011.06.055",

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volume = "38",

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T1 - Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

AU - Wu, Chia Ching

AU - Yang, Cheng Fu

AU - Hsieh, Yuan Tai

AU - Chen, Wen Ray

AU - Kuo, Chin Guo

AU - Huang, Hong Hsin

N1 - Funding Information: The authors will acknowledge to the financial support of NSC 99-2221-E-390-013-MY2 and the experimental data coordination of C.Y. Huang.

PY - 2012/1

Y1 - 2012/1

N2 - TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

AB - TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

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KW - C. Ferroelectric properties

KW - D. TiO

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Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

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Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO₂ thin films