Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

Chia Ching Wu, Cheng Fu Yang*, Yuan Tai Hsieh, Wen Ray Chen, Chin Guo Kuo, Hong Hsin Huang

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

9 引文 斯高帕斯(Scopus)

摘要

TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

原文英語
頁(從 - 到)223-227
頁數5
期刊Ceramics International
38
發行號1
DOIs
出版狀態已發佈 - 2012 一月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 陶瓷和複合材料
  • 製程化學與技術
  • 表面、塗料和薄膜
  • 材料化學

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