Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films

Chia Ching Wu, Cheng Fu Yang, Yuan Tai Hsieh, Wen Ray Chen, Chin Guo Kuo, Hong Hsin Huang

研究成果: 雜誌貢獻文章

9 引文 (Scopus)

摘要

TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

原文英語
頁(從 - 到)223-227
頁數5
期刊Ceramics International
38
發行號1
DOIs
出版狀態已發佈 - 2012 一月 1

指紋

Tungsten
Electric properties
Annealing
Thin films
Temperature
Energy gap
Magnetron sputtering
Titanium dioxide
Crystal structure
Glass

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

引用此文

Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films. / Wu, Chia Ching; Yang, Cheng Fu; Hsieh, Yuan Tai; Chen, Wen Ray; Kuo, Chin Guo; Huang, Hong Hsin.

於: Ceramics International, 卷 38, 編號 1, 01.01.2012, p. 223-227.

研究成果: 雜誌貢獻文章

Wu, Chia Ching ; Yang, Cheng Fu ; Hsieh, Yuan Tai ; Chen, Wen Ray ; Kuo, Chin Guo ; Huang, Hong Hsin. / Effects of tungsten thickness and annealing temperature on the electrical properties of W-TiO2 thin films. 於: Ceramics International. 2012 ; 卷 38, 編號 1. 頁 223-227.
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AU - Hsieh, Yuan Tai

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AU - Kuo, Chin Guo

AU - Huang, Hong Hsin

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N2 - TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

AB - TiO2 thin films were prepared by RF magnetron sputtering onto glass substrates and tungsten was deposited onto these thin films (deposition time 15-60 s) to form W-TiO2 bi-layer thin films. The crystal structure, morphology, and transmittance of these TiO2 and W-TiO 2 bi-layer thin films were investigated. Amorphous, rutile, and anatase TiO2 phases were observed in the TiO2 and W-TiO2 bi-layer thin films. Tungsten thickness and annealing temperature had large effects on the transmittance of the W-TiO2 thin films. The W-TiO2 bi-layer thin films with a tungsten deposition time of 60 s were annealed at 200 °C-400 °C. The band gap energies of the TiO2 and the non-annealed and annealed W-TiO2 bi-layer thin films were evaluated using (αhν)1/2 versus energy plots, showing that tungsten thickness and annealing temperature had major effects on the transmittance and band gap energy of W-TiO2 bi-layer thin films.

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