TY - GEN
T1 - Effects of thickness on the properties of indium-doped zinc oxide films
AU - Wu, Chia Ching
AU - Diao, Chien Chen
AU - Yang, Chih Chin
AU - Chao, Yi Chieh
AU - Kuo, Chin Guo
AU - Yang, Cheng Fu
N1 - Publisher Copyright:
© Springer International Publishing Switzerland 2014.
PY - 2014
Y1 - 2014
N2 - In this study, radio frequency magnetron sputtering was used to deposit indium-doped zinc oxide (IZO) films with varying deposition time on glass substrates. The structural, optical, and resistivity properties of IZO films were investigated with field emission scanning electron microscope, X-ray diffraction patterns, UV–visible spectroscopy, and Hall-effect analysis. XRD analysis on IZO films showed that only the (002) diffraction peak was observable, indicating that the IZO films showed a good c-axis orientation perpendicular to the glass substrates. As the deposition time of IZO films increased from 30 to 90 min, the thickness increased from 237 to 389 nm, the grain size increased from 12.3 to 87.6 nm, and the resistivity decreased from 9.08 9 10-3 to 2.85 9 10-3 X-cm. The transmittance was found to slightly decrease with the increasing thickness of IZO films.
AB - In this study, radio frequency magnetron sputtering was used to deposit indium-doped zinc oxide (IZO) films with varying deposition time on glass substrates. The structural, optical, and resistivity properties of IZO films were investigated with field emission scanning electron microscope, X-ray diffraction patterns, UV–visible spectroscopy, and Hall-effect analysis. XRD analysis on IZO films showed that only the (002) diffraction peak was observable, indicating that the IZO films showed a good c-axis orientation perpendicular to the glass substrates. As the deposition time of IZO films increased from 30 to 90 min, the thickness increased from 237 to 389 nm, the grain size increased from 12.3 to 87.6 nm, and the resistivity decreased from 9.08 9 10-3 to 2.85 9 10-3 X-cm. The transmittance was found to slightly decrease with the increasing thickness of IZO films.
KW - Indium-doped zinc oxide
KW - RF magnetron sputtering
KW - Thickness
KW - Transparent conductive oxide
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U2 - 10.1007/978-3-319-04573-3_24
DO - 10.1007/978-3-319-04573-3_24
M3 - Conference contribution
AN - SCOPUS:84928231972
T3 - Lecture Notes in Electrical Engineering
SP - 187
EP - 194
BT - Proceedings of the 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013
A2 - Chen, Cheng-Yi
A2 - Yang, Cheng-Fu
A2 - Juang, Jengnan
PB - Springer Verlag
T2 - 2nd International Conference on Intelligent Technologies and Engineering Systems, ICITES 2013
Y2 - 12 December 2013 through 14 December 2013
ER -