Effects of step-edge conditions on the magnetoresistance of La 0.7Sr0.3MnO3 tunneling junctions

L. M. Wang; Chen Chung Liu; H. C. Yang; H. E. Horng

doi:10.1016/j.tsf.2003.12.036

Effects of step-edge conditions on the magnetoresistance of La _0.7Sr_0.3MnO₃ tunneling junctions

L. M. Wang^*
, Chen Chung Liu
, H. C. Yang
, H. E. Horng

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

La_0.7Sr_0.3MnO₃ (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO₃ substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.

原文	英語
頁（從 - 到）	359-364
頁數	6
期刊	Thin Solid Films
卷	457
發行號	2
DOIs	https://doi.org/10.1016/j.tsf.2003.12.036
出版狀態	已發佈 - 2004 6月 15

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2003.12.036

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@article{88133ecd34f14046a6dee14aa4606a68,

title = "Effects of step-edge conditions on the magnetoresistance of La 0.7Sr0.3MnO3 tunneling junctions",

abstract = "La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.",

keywords = "Atomic force microscopy, Electrical properties and measurements, Sputtering, Tunneling",

author = "Wang, \{L. M.\} and Liu, \{Chen Chung\} and Yang, \{H. C.\} and Horng, \{H. E.\}",

note = "Funding Information: The authors thank the National Science Council of the Republic of China for financial support under Grant No. NSC 92-2112-M-212-001 and Grant No. NSC 91-2112-M-002-047. This work was also partially supported by the Da-Yeh University under Grant No. DEE-9122 and by the Ministry of Education under the program of promoting university academic excellence.",

year = "2004",

month = jun,

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doi = "10.1016/j.tsf.2003.12.036",

language = "English",

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AU - Wang, L. M.

AU - Liu, Chen Chung

AU - Yang, H. C.

AU - Horng, H. E.

N1 - Funding Information: The authors thank the National Science Council of the Republic of China for financial support under Grant No. NSC 92-2112-M-212-001 and Grant No. NSC 91-2112-M-002-047. This work was also partially supported by the Da-Yeh University under Grant No. DEE-9122 and by the Ministry of Education under the program of promoting university academic excellence.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.

AB - La0.7Sr0.3MnO3 (LSMO) tunneling magnetoresistance (TMR) junctions have been successfully fabricated on step-edge (001) SrTiO3 substrates with various step-edge conditions. We report the fabrication techniques of LSMO step-edge TMR junctions in which the standard photolithography and ion-beam etching techniques are used to control the step angle and step height. We study the influence of step-edge conditions on the resistance and MR behavior of LSMO TMR junctions. It is found that the magnitude of junction resistance increases with an increase of step angle or with a decrease of d/H ratio, where d is the film thickness and H the step height. Based on our results, we conclude that a suitable d/H ratio of ∼0.5-0.9 with a high step angle of φ≥70° can be regarded as the optimum conditions for the fabrication of step-edge TMR junctions.

KW - Atomic force microscopy

KW - Electrical properties and measurements

KW - Sputtering

KW - Tunneling

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DO - 10.1016/j.tsf.2003.12.036

M3 - Article

AN - SCOPUS:2342525203

SN - 0040-6090

VL - 457

SP - 359

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JO - Thin Solid Films

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IS - 2

ER -

Effects of step-edge conditions on the magnetoresistance of La 0.7Sr0.3MnO3 tunneling junctions

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ASJC Scopus subject areas

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Effects of step-edge conditions on the magnetoresistance of La _0.7Sr_0.3MnO₃ tunneling junctions