Effects of postdeposition annealing on the metal-insulator transition of VO2-x thin films prepared by RF magnetron sputtering

Shiu Jen Liu*, Yu Tai Su, Juang Hsin Hsieh

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

14 引文 斯高帕斯(Scopus)

摘要

We report the fabrication of textured VO2-x films on c-cut sapphire substrates by postdeposition annealing of V2O3 films prepared by RF magnetron sputtering using V2O3 as the target. Although the prepared VO2-x films are expected to be oxygen-deficient, overoxidation on the film surface was revealed by X-ray photoelectron spectroscopy. The metal-insulator transition (MIT) characteristics of the VO2-x films were investigated. MIT parameters including the transition temperature, transition sharpness, and hysteresis width of the VO2-x films were manipulated by varying the oxygen pressure during postdeposition annealing. The suppression of optical transmittance in the near-infrared region was observed by increasing the temperature through the MIT.

原文英語
文章編號033201
期刊Japanese Journal of Applied Physics
53
發行號3
DOIs
出版狀態已發佈 - 2014 三月

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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