Effects of post annealing temperatures on the properties of Sr 0.6Ba0.4Nb2O6 thin films

Cheng Fu Yang; Chin Guo Kuo; Tai Ping Sun; Sung Mao Wu; Wen Ray Chen

doi:10.1109/INEC.2011.5991811

Effects of post annealing temperatures on the properties of Sr _0.6Ba_0.4Nb₂O₆ thin films

Cheng Fu Yang^*, Chin Guo Kuo, Tai Ping Sun, Sung Mao Wu, Wen Ray Chen

^*此作品的通信作者

工業教育學系

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

Sr_0.6Ba_0.4Nb₂O₆ (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600^°C to 700 ^°C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800^°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

原文	英語
主出版物標題	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991811
出版狀態	已發佈 - 2011
事件	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣持續時間: 2011 6月 21 → 2011 6月 24

出版系列

名字	Proceedings - International NanoElectronics Conference, INEC
ISSN（列印）	2159-3523

其他

其他	4th IEEE International Nanoelectronics Conference, INEC 2011
國家/地區	臺灣
城市	Tao-Yuan
期間	2011/06/21 → 2011/06/24

ASJC Scopus subject areas

電氣與電子工程

存取文件

10.1109/INEC.2011.5991811

其它文件與鏈接

引用此

Yang, CF, Kuo, CG, Sun, TP, Wu, SM & Chen, WR 2011, Effects of post annealing temperatures on the properties of Sr _0.6Ba_0.4Nb₂O₆ thin films. 於 4th IEEE International NanoElectronics Conference, INEC 2011., 5991811, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, 臺灣, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991811

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abstract = "Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.",

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AU - Yang, Cheng Fu

AU - Kuo, Chin Guo

AU - Sun, Tai Ping

AU - Wu, Sung Mao

AU - Chen, Wen Ray

PY - 2011

Y1 - 2011

N2 - Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

AB - Sr0.6Ba0.4Nb2O6 (SBN) thin films were deposited using radio frequency (RF) magnetron sputtering method and post annealing in a conventional furnace. The annealing process had improved the crystallization and also had large influences on the crystalline orientation. As the annealing temperature increased from 600°C to 700 °C, the diffraction intensities of (410) and (001) planes increased. Annealed at 800°C, the SBN thin films showed highly c-axis crystalline orientation of (001) plane. The influences of annealing temperatures on the electrical characteristics of the polarization-applied electric field curves, the capacitance-voltage curves, and the leakage current density-electric field curves were investigated.

KW - SrBaNb O

KW - annealing

KW - crystalline orientation

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