Effects of H2 flow rate and H2 plasma treatment on the properties of AZO films

C. G. Kuo, C. L. Li, C. C. Huang, F. H. Wang, C. F. Yang, I. C. Chen

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

In this study, a 1350°C-sintered 98 mol% ZnO-1 mol% Al2O3 (AZO, Zn: Al= 98:2) ceramic was used as a target and deposited on glass using a r.f. magnetron sputtering system at a deposition temperature of 200°C. The effects of different H2 flow rates (H2/(H2+Ar)=0% ~ 9.09%, abbreviated as H2-deposited AZO films) added during the deposition process on the crystallization, resistivity, and optical transmission spectrum of AZO films were investigated. The Burstein-Moss shift effects were measured and used to prove that the defects of AZO films decreased with increasing H2 flow rate. For comparison, the 2% H2-deposited AZO films were also treated by the H2 plasma at room temperature for 60 min (plasma-treated AZO films). The effects of H2 plasma on the properties of the H2-deposited AZO films were also studied. The value variations in the optical band gap (Eg) of the H2-deposited and plasma-treated AZO films were evaluated from the plots of (αhv)2 = c(hv-Eg).

原文英語
主出版物標題Metallurgy Technology and Materials II
頁面447-451
頁數5
DOIs
出版狀態已發佈 - 2013
事件2nd International Conference on Metallurgy Technology and Materials, ICMTM 2013 - Hong Kong, 中国
持續時間: 2013 六月 252013 六月 26

出版系列

名字Advanced Materials Research
813
ISSN(列印)1022-6680

其他

其他2nd International Conference on Metallurgy Technology and Materials, ICMTM 2013
國家中国
城市Hong Kong
期間2013/06/252013/06/26

ASJC Scopus subject areas

  • Engineering(all)

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