Effects of growth temperature on Mg-doped ZnO films fabricated by pulsed-laser deposition

Hau Wei Fang, Jenh Yih Juang, Shiu Jen Liu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Magnesium-doped zinc oxide (MZO) films were fabricated by pulsed-laser deposition (PLD) at various substrate temperatures (Ts). The substitution of Mg for Zn sites (MgZn) in the films was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) measurements. Characteristic deep-level emissions (DLE) observed in the RTPL spectra further indicate the presence of Zn vacancies (VZn) in the MZO films. Moreover, it was found that the intensity of the blue emission corresponding to VZn increases with increasing Ts, indicating the important role played by Ts on the incorporation of Mg into ZnO matrix. Hall effect measurements reveal the p-type conduction of the MZO films grown at 400°C. The p-type characteristic is attributed to the formation of nMgZn - VZn complex which could act as acceptor for MZO films.

原文英語
頁(從 - 到)992-1000
頁數9
期刊International Journal of Nanotechnology
14
發行號12
DOIs
出版狀態已發佈 - 2017

ASJC Scopus subject areas

  • 生物工程
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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