Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu; Shih Hao Su; Hau Wei Fang; Jang Hsing Hsieh; Jenh Yih Juang

doi:10.1016/j.apsusc.2011.06.129

Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Shiu Jen Liu^*
, Shih Hao Su
, Hau Wei Fang
, Jang Hsing Hsieh
, Jenh Yih Juang

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Amorphous thin films of InGaZnO ₄ (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

原文	英語
頁（從 - 到）	10018-10021
頁數	4
期刊	Applied Surface Science
卷	257
發行號	23
DOIs	https://doi.org/10.1016/j.apsusc.2011.06.129
出版狀態	已發佈 - 2011 9月 15

ASJC Scopus subject areas

一般化學
凝聚態物理學
一般物理與天文學
表面和介面
表面、塗料和薄膜

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10.1016/j.apsusc.2011.06.129

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title = "Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films",

abstract = " Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.",

keywords = "Amorphous transparent conducting oxide, Cr doping, Diluted magnetic semiconductor, Indium gallium zinc oxide films",

author = "Liu, \{Shiu Jen\} and Su, \{Shih Hao\} and Fang, \{Hau Wei\} and Hsieh, \{Jang Hsing\} and Juang, \{Jenh Yih\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan , under grant no. NSC 98-2112-M-003-005-MY3 .",

year = "2011",

month = sep,

day = "15",

doi = "10.1016/j.apsusc.2011.06.129",

language = "English",

volume = "257",

pages = "10018--10021",

journal = "Applied Surface Science",

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TY - JOUR

T1 - Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

AU - Liu, Shiu Jen

AU - Su, Shih Hao

AU - Fang, Hau Wei

AU - Hsieh, Jang Hsing

AU - Juang, Jenh Yih

N1 - Funding Information: This work was supported by the National Science Council of Taiwan , under grant no. NSC 98-2112-M-003-005-MY3 .

PY - 2011/9/15

Y1 - 2011/9/15

N2 - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

AB - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.

KW - Amorphous transparent conducting oxide

KW - Cr doping

KW - Diluted magnetic semiconductor

KW - Indium gallium zinc oxide films

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DO - 10.1016/j.apsusc.2011.06.129

M3 - Article

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VL - 257

SP - 10018

EP - 10021

JO - Applied Surface Science

JF - Applied Surface Science

IS - 23

ER -

Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

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