TY - JOUR
T1 - Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films
AU - Liu, Shiu Jen
AU - Su, Shih Hao
AU - Fang, Hau Wei
AU - Hsieh, Jang Hsing
AU - Juang, Jenh Yih
N1 - Funding Information:
This work was supported by the National Science Council of Taiwan , under grant no. NSC 98-2112-M-003-005-MY3 .
PY - 2011/9/15
Y1 - 2011/9/15
N2 - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.
AB - Amorphous thin films of InGaZnO 4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.
KW - Amorphous transparent conducting oxide
KW - Cr doping
KW - Diluted magnetic semiconductor
KW - Indium gallium zinc oxide films
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U2 - 10.1016/j.apsusc.2011.06.129
DO - 10.1016/j.apsusc.2011.06.129
M3 - Article
AN - SCOPUS:80051791835
SN - 0169-4332
VL - 257
SP - 10018
EP - 10021
JO - Applied Surface Science
JF - Applied Surface Science
IS - 23
ER -